752 research outputs found
Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees
Introducing an epitaxial growth technique called corner overgrowth, we
fabricate a quantum confinement structure consisting of a high-mobility
GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate
corner. The resulting corner-junction quantum-well heterostructure effectively
bends a two-dimensional electron system (2DES) at an atomically sharp angle. The high-mobility 2DES demonstrates fractional quantum Hall effect
on both facets. Lossless edge-channel conduction over the corner confirms a
continuum of 2D electrons across the junction, consistent with
Schroedinger-Poisson calculations of the electron distribution. This growth
technique differs distinctly from cleaved-edge overgrowth and enables a
complementary class of new embedded quantum heterostructures.Comment: 3 pages, 4 figures, latest version accepted to AP
Kondo Effect in a Many-Electron Quantum Ring
The Kondo effect is investigated in a many-electron quantum ring as a
function of magnetic field. For fields applied perpendicular to the plane of
the ring a modulation of the Kondo effect with the Aharonov-Bohm period is
observed. This effect is discussed in terms of the energy spectrum of the ring
and the parametrically changing tunnel coupling. In addition, we use gate
voltages to modify the ground-state spin of the ring. The observed splitting of
the Kondo-related zero-bias anomaly in this configuration is tuned with an
in-plane magnetic field.Comment: 4 pages, 4 figure
Singlet-Triplet Transition Tuned by Asymmetric Gate Voltages in a Quantum Ring
Wavefunction and interaction effects in the addition spectrum of a Coulomb
blockaded many electron quantum ring are investigated as a function of
asymmetrically applied gate voltages and magnetic field. Hartree and exchange
contributions to the interaction are quantitatively evaluated at a crossing
between states extended around the ring and states which are more localized in
one arm of the ring. A gate tunable singlet-triplet transition of the two
uppermost levels of this many electron ring is identified at zero magnetic
field.Comment: 4 page
Vertical quantum wire realized with double cleaved-edge overgrowth
A quantum wire is fabricated on (001)-GaAs at the intersection of two
overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via
two-dimensional (2D) leads. A sidegate controls the density of the wire
revealing conductance quantization. The step height is strongly reduced from
2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and
mobility for both cleave facets with four-point measurements. The density on
the first facet is modulated by the substrate potential, depleting a 2um wide
strip that defines the wire length. Micro-photoluminescence shows an extra peak
consistent with 1D electron states at the corner.Comment: 4 pages, 4 figure
Transmission Phase Through Two Quantum Dots Embedded in a Four-Terminal Quantum Ring
We use the Aharonov-Bohm effect in a four-terminal ring based on a Ga[Al]As
heterostructure for the measurement of the relative transmission phase. In each
of the two interfering paths we induce a quantum dot. The number of electrons
in the two dots can be controlled independently. The transmission phase is
measured as electrons are added to or taken away from the individual quantum
dots.Comment: 3 pages, 4 figure
Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects
A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As
quantum wells grown on (110) oriented substrate. The spin lifetime of spins
perpendicular to the growth direction is about one order of magnitude shorter
compared to spins along (110). The spin lifetimes of both spin orientations
decrease monotonically above a temperature of 80 and 120 K, respectively. The
decrease is very surprising for spins along (110) direction and cannot be
explained by the usual Dyakonov Perel dephasing mechanism. A novel spin
dephasing mechanism is put forward that is based on scattering of electrons
between different quantum well subbands.Comment: 4 pages, 3 postscript figures, corrected typo
Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems
We have fabricated doubly clamped beams from GaAs/AlGaAs quantum-well heterostructures containing a high-mobility two-dimensional electron gas (2DEG). Applying an rf drive to in-plane side gates excites the beam's mechanical resonance through a dipole–dipole mechanism. Sensitive high-frequency displacement transduction is achieved by measuring the ac emf developed across the 2DEG in the presence of a constant dc sense current. The high mobility of the incorporated 2DEG provides low-noise, low-power, and high-gain electromechanical displacement sensing through combined piezoelectric and piezoresistive mechanisms
Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings
We measure an anomalous magnetoresistance peak within the lowest Landau level
(nu = 1) minimum of a two-dimensional hole system on (110) GaAs.
Self-consistent calculations of the valence band mixing show that the two
lowest spin-index Landau levels anticross in a perpendicular magnetic field B
consistent with where the experimental peak is measured, Bp. The temperature
dependence of the anomalous peak height is interpreted as an activated behavior
across this anticrossing gap. Calculations of the spin polarization in the
lowest Landau levels predict a rapid switch from about -3/2 to +3/2 spin at the
anticrossing. The peak position Bp is shown to be affected by the confinement
electrostatics, and the utility of a tunable anticrossing position for
spintronics applications is discussed.Comment: 4 pages, 4 figure
Transport properties of quantum dots with hard walls
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation
with an atomic force microscope. This technique, in combination with top gate
voltages, allows us to generate steep walls at the confining edges and small
lateral depletion lengths. The confinement is characterized by low-temperature
magnetotransport measurements, from which the dots' energy spectrum is
reconstructed. We find that in small dots, the addition spectrum can
qualitatively be described within a Fock-Darwin model. For a quantitative
analysis, however, a hard-wall confinement has to be considered. In large dots,
the energy level spectrum deviates even qualitatively from a Fock-Darwin model.
The maximum wall steepness achieved is of the order of 0.4 meV/nm.Comment: 9 pages, 5 figure
Transport properties of quantum dots with hard walls
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation
with an atomic force microscope. This technique, in combination with top gate
voltages, allows us to generate steep walls at the confining edges and small
lateral depletion lengths. The confinement is characterized by low-temperature
magnetotransport measurements, from which the dots' energy spectrum is
reconstructed. We find that in small dots, the addition spectrum can
qualitatively be described within a Fock-Darwin model. For a quantitative
analysis, however, a hard-wall confinement has to be considered. In large dots,
the energy level spectrum deviates even qualitatively from a Fock-Darwin model.
The maximum wall steepness achieved is of the order of 0.4 meV/nm.Comment: 9 pages, 5 figure
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